Title

Magnetic Flip Flops for Space Applications

Publication Date

10-2006

Journal

IEEE Transactions on Magnetics

Volume

42

Issue

10

First Page

2751

Last Page

2753

Abstract

The radiation environment of space presents a significant threat to the reliability of nonvolatile memory technologies. Ionizing radiation disturbs the charge stored on floating gates, and cosmic rays can permanently damage thin oxides. A new memory technology based on the magnetic tunneling junction (MTJ) appears to offer superior resistance to radiation effects and virtually unlimited write endurance. A magnetic flip flop has a number of potential applications, such as the configuration memory in field-programmable logic devices. However, using MTJs in a flip flop requires radically different circuitry for storing and retrieving data. New techniques are needed to insure that magnetic flip flops are reliable in the radiation environment of space. We propose a new radiation-tolerant magnetic flip flop that uses the inherent resistance of the MTJ to increase its immunity to single event upset and employs a robust “Pac-man” magnetic element.

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