Magnetic Flip Flops for Space Applications
IEEE Transactions on Magnetics
The radiation environment of space presents a signiﬁcant threat to the reliability of nonvolatile memory technologies. Ionizing radiation disturbs the charge stored on ﬂoating gates, and cosmic rays can permanently damage thin oxides. A new memory technology based on the magnetic tunneling junction (MTJ) appears to offer superior resistance to radiation effects and virtually unlimited write endurance. A magnetic ﬂip ﬂop has a number of potential applications, such as the conﬁguration memory in ﬁeld-programmable logic devices. However, using MTJs in a ﬂip ﬂop requires radically different circuitry for storing and retrieving data. New techniques are needed to insure that magnetic ﬂip ﬂops are reliable in the radiation environment of space. We propose a new radiation-tolerant magnetic ﬂip ﬂop that uses the inherent resistance of the MTJ to increase its immunity to single event upset and employs a robust “Pac-man” magnetic element.
Hass, Kenneth J.; Donohoe, Gregory W.; Hong, Yang-Ki; and Choi, Byoung C.. "Magnetic Flip Flops for Space Applications." IEEE Transactions on Magnetics 42, no. 10 (2006) : 2751-2753.
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